Synaptic devices based on purely electronic memristors
Synaptic devices based on purely electronic memristors
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基于纯电子忆阻器的突触装置
DOI：
10.1063/1.4939436
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发表时间：
2016-01-04
影响因子：
4
通讯作者：
Li, Kang
中科院分区：
文献类型：
--
作者：
Pan, Ruobing;Li, Jun;Li, Kang
Memristive devices have been widely employed to emulate biological synaptic behavior. In these cases, the memristive switching generally originates from electrical field induced ion migration or Joule heating induced phase change. In this letter, the Ti/ZnO/Pt structure was found to show memristive switching ascribed to a carrier trapping/detrapping of the trap sites (e.g., oxygen vacancies or zinc interstitials) in ZnO. The carrier trapping/detrapping level can be controllably adjusted by regulating the current compliance level or voltage amplitude. Multi-level conductance states can, therefore, be realized in such memristive device. The spike-timing-dependent plasticity, an important Hebbian learning rule, has been implemented in this type of synaptic device. Compared with filamentary-type memristive devices, purely electronic memristors have potential to reduce their energy consumption and work more stably and reliably, since no structural distortion occurs.
