Preparation of a preferentially oriented SAPO-34 membrane by secondary growth under microwave irradiation
Preparation of a preferentially oriented SAPO-34 membrane by secondary growth under microwave irradiation
复制标题
微波辐射二次生长制备择优取向SAPO-34膜
DOI：
10.1039/c6ra09018d
复制
发表时间：
2016-01-01
期刊：
影响因子：
3.9
通讯作者：
Zhang, Baoquan
中科院分区：
文献类型：
--
作者：
Bing, Liancheng;Wang, Guangjian;Zhang, Baoquan
采用旋涂法在α-Al 2 O3基体上直接组装成高度取向的SAPO-34晶种层，然后采用微波二次水热法在晶种层上制备了无大缺陷的择优取向SAPO-34膜。在302 K和138 kPa压降下，合成的膜表现出1.57 × 10−6 s−1 Pa−1的高CO2渗透率，CO2/CH 4分离选择性为109。
Piece-like SAPO-34 crystals were directly assembled into a highly oriented seed layer on the α-Al2O3 substrate by using spin-coating, and then a preferentially oriented SAPO-34 membrane with no large defects was prepared on an oriented SAPO-34 seed layer by secondary hydrothermal microwave growth. The synthesized membrane exhibited a high CO2 permeance of 1.57 × 10−6 s−1 Pa−1 at 302 K and 138 kPa pressure drop, with a CO2/CH4 separation selectivity of 109.