Semiconductor plasmonic gas sensor using on-chip infrared spectroscopy
Semiconductor plasmonic gas sensor using on-chip infrared spectroscopy
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DOI：
10.1007/s00339-016-0707-2
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发表时间：
2017-01-01
影响因子：
2.7
通讯作者：
Swillam, Mohamed A.
中科院分区：
文献类型：
--
作者：
Elsayed, Mohamed Y.;Ismail, Yehea;Swillam, Mohamed A.
在本文中，我们采取了一种新的方法在芯片上的光学传感的气体。传统上使用折射率来光学地感测气体，这是一种非理想的方法，因为难以区分具有非常相似的折射率的气体。另一方面，红外（IR）吸收光谱在指纹区域中具有特征峰，其允许识别分析物。采用高掺杂的n型砷化铟设计了一种等离子体缝隙波导，并利用有限元法进行了色散分析，研究了掺杂浓度和波导几何形状对导模的影响。用时域有限差分法模拟了波导对空气、甲烷和辛烷的透射光谱，红外光谱中出现了明显的特征峰。这是一种很有前途的通用方法，可以检测任何红外活性气体。
In this paper, we take a novel approach in on-chip optical sensing of gases. Gases have conventionally been optically sensed using refractive index, which is a non-ideal method because of the difficulty in differentiating gases with very similar refractive indices. Infrared (IR) absorption spectra on the other hand have characteristic peaks in the fingerprint region that allow identifying the analyte. Highly doped n-type Indium Arsenide was used to design a plasmonic slot waveguide, and a dispersion analysis was carried out using the finite element method to study the effect of dopant concentration and waveguide geometry on the guided modes. Finite-difference time domain was used to simulate the transmission spectrum of the waveguide with air, methane and octane and the characteristic peaks in the IR spectra showed up strongly. This is a promising versatile method that can sense any IR-active gas.