Switched-current circuits in digital CMOS technology with low charge-injection errors
Switched-current circuits in digital CMOS technology with low charge-injection errors
复制标题
采用数字 CMOS 技术的开关电流电路，具有低电荷注入误差
DOI：
10.1109/jssc.2002.803019
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
P. Allen
中科院分区：
文献类型：
--
作者：
G. Balachandran;P. Allen
提出了一种低电荷注入误差的数字CMOS开关电流(SI)电路。这些电路基于虚拟地节点上的开关的操作，从而导致与信号无关的电荷注入。在此方案的基础上，讨论了存储单元的不同拓扑。为了验证所提出的理论概念，采用0.25/SPLµ/m数字工艺实现了一个三阶椭圆低通SI滤波器。该滤波器的额定工作时钟频率为10 MHz，截止频率为1 MHz，电源电压为2.3 V，功耗为29 mW，处理输入信号的峰值差高达600-/SPL mU/A。对于调制指数为0.5的0.3-MHz信号，该电路的低电荷注入特性反映在-59分贝的低总谐波失真上。
In this paper, digital CMOS switched-current (SI) circuits with low charge-injection errors are presented. These circuits are based on the operation of the switches at virtual-ground nodes to result in signal-independent charge injection. Based on this scheme, different topologies for the memory cell are discussed. To verify the theoretical concepts developed, a third-order elliptic low-pass SI filter is implemented in a 0.25-/spl mu/m digital CMOS process. The filter nominally operates with a clock frequency of 10 MHz, cutoff frequency of 1 MHz, and a power supply of 2.3 V, while consuming 29 mW of power and processing input signals as large as 600-/spl mu/A peak differential. The low-charge injection nature of the circuit is reflected in its low total harmonic distortion of -59 dB for a 0.3-MHz signal with a modulation index of 0.5.