Stochastic printing behavior of non-local mask deficiencies in EUV lithography
Stochastic printing behavior of non-local mask deficiencies in EUV lithography
复制标题
EUV 光刻中非局部掩模缺陷的随机印刷行为
DOI：
10.1117/12.2572998
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
L. Melvin
中科院分区：
文献类型：
--
作者：
R. Jonckheere;L. Melvin
本文扩展了2019年的研究结果，即EUV掩模上的局部缺陷是印刷晶圆上随机故障的触发点，对非局部掩模缺陷进行了模拟研究。这些涉及较大面积性质的缺点，其中掩模版偏离理想掩模版或不符合规范。这些包括方面，如全球CD误差，吸收体斜率，线边缘粗糙度，污染的影响，和多层粗糙度。本文的目的是审查是否掩模规格需要细化的角度减轻晶圆印刷随机。
This paper extends the 2019 findings, that local defects on an EUV mask are trigger points for stochastic failures on the printed wafer, to a simulation study of non-local mask deficiencies. These relate to shortcomings of a larger area nature where the reticle deviates from an ideal reticle or fails specification. These include aspects such as global CD error, absorber slope, line edge roughness, contamination effects, and multilayer roughness. The paper’s intent is to review whether mask specifications need refinement from the viewpoint of mitigation of wafer printing stochastics.