Electrical analysis of inter-growth structured Bi4Ti3O12-Na0.5Bi4.5Ti4O15 ceramics
Electrical analysis of inter-growth structured Bi4Ti3O12-Na0.5Bi4.5Ti4O15 ceramics
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共生结构Bi4Ti3O12-Na0.5Bi4.5Ti4O15陶瓷的电学分析
DOI：
10.1088/1674-1056/26/7/077701
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发表时间：
2017
影响因子：
1.7
通讯作者：
Chen Yunjing
中科院分区：
文献类型：
--
作者：
Jiang Xiangping;Jiang Yalin;Jiang Xingan;Chen Chao;Tu Na;Chen Yunjing
采用传统固相反应方法成功合成了共生铋层状结构铁电体（BLSF）Bi 4 Ti 3 O 12–Na 0.5 Bi 4.5 Ti 4 O 15 (BIT–NBT)。使用 GSAS 软件进行 X 射线衍射 (XRD) Rietveld 精修。获得良好的一致性和低残差。 XRD衍射峰可以很好地归入I2cm空间群。在高分辨率 TEM 图像中进一步观察到了共生结构。测量并系统分析了介电和阻抗特性。在 763–923 K 温度范围（低于
Inter-growth bismuth layer-structured ferroelectrics (BLSFs), Bi 4 Ti 3 O 12–Na 0.5 Bi 4.5 Ti 4 O 15 (BIT–NBT), were successfully synthesized using the traditional solid-state reaction method. X-ray diffraction (XRD) Rietveld refinements were conducted using GSAS software. Good agreement and low residual are obtained. The XRD diffraction peaks can be well indexed into I2cm space group. The inter-growth structure was further observed in the high-resolution TEM image. Dielectric and impedance properties were measured and systematically analyzed. At the temperature range 763–923 K (below