PbTiO3 buffer layer effects on the structural and electrical properties of Pb(Zr, Ti)O3 thin films grown by sputtering on silicon substrates
PbTiO3 buffer layer effects on the structural and electrical properties of Pb(Zr, Ti)O3 thin films grown by sputtering on silicon substrates
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PbTiO3 缓冲层对硅衬底上溅射生长的 Pb(Zr, Ti)O3 薄膜结构和电学性能的影响
DOI：
10.1116/1.581364
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
D. Remiens
中科院分区：
文献类型：
--
作者：
G. Vélu;T. Haccart;B. Jaber;D. Remiens
采用射频磁控溅射技术在Si/SiO2和Si/SiO2/Ti/Pt衬底上生长了Pb(Zr, Ti)O3 （PZT）薄膜，研究了PbTiO3 （Pt）缓冲层对PZT薄膜结构和电学性能的影响。PT缓冲层是原位生长的（不经过退火），厚度从100到1200 A不等。PT层的取向可以通过沉积温度来调节。在室温下，通过常规的镀后处理，制备了成分接近于致形相（54/46）的PZT薄膜。在Si/SiO2/PT衬底上沉积的PZT薄膜中裂纹的消失表明缓冲层具有应力吸收作用。通过使用PT缓冲层，可以控制PZT薄膜的取向。没有缓冲层的多晶PZT薄膜根据缓冲层的首选取向改变为高度（100）或（111）取向的薄膜。缓冲层厚度和PZT膜的取向对…
Pb(Zr, Ti)O3 (PZT) thin films have been grown on Si/SiO2 and Si/SiO2/Ti/Pt substrates by rf magnetron sputtering and the effects of PbTiO3 (PT) buffer layers to the structural and electrical properties of PZT films were studied. The PT buffer layers were grown in situ (without postannealing) with thicknesses ranging from 100 to 1200 A. The PT layer orientation can be adjusted by the deposition temperature. The PZT films with a composition near the morphotropic phase (54/46) were deposited at room temperature followed by a conventional postannealing treatment. The disappearance of cracks in PZT films deposited on Si/SiO2/PT substrates indicates the role of the buffer layer as a stress absorber. By using a PT buffer layer it was possible to control the PZT films’ orientation. Polycrystalline PZT films without a buffer layer changed to highly (100) or (111) oriented films, depending on the preferred orientation of the buffer layer. The influence of the buffer layer thickness and the PZT films’ orientation on...