Photoconductivity and FET performance of an n-type porphyrazine semiconductor, tetrakis(thiadiazole)porphyrazine
Photoconductivity and FET performance of an n-type porphyrazine semiconductor, tetrakis(thiadiazole)porphyrazine
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DOI：
10.1016/j.orgel.2010.11.005
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发表时间：
2011-02-01
影响因子：
3.2
通讯作者：
Ito, Hiroshi
中科院分区：
文献类型：
--
作者：
Miyoshi, Yasuhito;Fujimoto, Takuya;Ito, Hiroshi
研究了噻二唑环化四氮杂卟啉化合物四（噻二唑）四氮杂卟啉（缩写为 H(2)TTDPz）薄膜的光电导性和场效应晶体管（FET）性能。 ITO/H(2)TTDPz/Au 光电池的光电流作用光谱表现出交感和抗热响应，具体取决于偏压极性。光电流响应的这种特征差异被解释为肖特基型光电池中的滤光效应；负极附近产生的激子解离可以有效地在n型半导体中产生光电流。我们还在离子液体和SiO2栅极操作的薄膜FET中发现了H(2)TTDPz的n型半导体行为，并获得了7.2 x 10 (4) cm(2) V (1) s (1)的场效应迁移率和10(4)的开/关比。 (C) 2010 Elsevier B.V. 保留所有权利。
Photoconductivity and field effect transistor (FET) performance of thin films of a thiadiazole-annulated porphyrazine compound, tetrakis(thiadiazole) porphyrazine (abbreviated as H(2)TTDPz) were examined. The photocurrent-action spectra for ITO/H(2)TTDPz/Au photocell exhibited symbatic and antibatic responses, depending on the bias polarity. This characteristic difference in photocurrent responses was interpreted as a filter effect in Schottky-type photocells; the dissociation of the excitons generated near the negative electrode can effectively produce photocurrent in n-type semiconductors. We also found n-type semiconductor behavior of H(2)TTDPz in the thin-film FETs operated by the gates of an ionic liquid and SiO2, and obtained a field effect mobility of 7.2 x 10 (4) cm(2) V (1) s (1) and an on/off ratio of 10(4). (C) 2010 Elsevier B.V. All rights reserved.