Electrical spin injection in a ferromagnetic semiconductor heterostructure
Electrical spin injection in a ferromagnetic semiconductor heterostructure
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DOI：
10.1038/45509
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发表时间：
1999-12-16
期刊：
影响因子：
64.8
通讯作者：
Awschalom, DD
中科院分区：
文献类型：
--
作者：
Ohno, Y;Young, DK;Awschalom, DD
传统的电子学是基于对电荷的操纵。另一个有趣的选择是自旋电子学领域：其中半导体器件中电子自旋的经典操纵产生了通过磁性阅读和写入非易失性信息的可能性（1，2）此外，在传统半导体和量子点中保持相干自旋态的能力（4）最终可能使固态量子计算成为可能（5，6）。最近的研究表明，光激发的电子自旋可以在超过100微米的距离上保持其相干性（参考文献7）。但是，以电的方式注入自旋极化载流子仍然是一个艰巨的挑战（8，9），在这里，我们报告了使用基于砷化镓的III-V异质结构的全半导体发光自旋电子器件的制造。使用p型铁磁半导体（10）作为自旋极化器实现（在零磁场中）向铁磁半导体中的电自旋注入。注入的空穴的自旋极化直接由空穴与注入的（非极化的）电子复合后发射的电致发光的极化确定。
Conventional electronics is based on the manipulation of electronic charge. An intriguing alternative is the field of 'spintronics: wherein the classical manipulation of electronic spin in semiconductor devices gives rise to the possibility of reading and writing non-volatile information through magnetism(1,2) Moreover, the ability to preserve coherent spin states in conventional semiconductors' and quantum dots(4),ay eventually enable quantum computing in the solid state(5,6). Recent studies have shown that optically excited electron spins can retain their coherence over distances exceeding 100 micrometres (ref. 7). But to inject spin-polarized carriers electrically remains a formidable challenge(8,9), Here we report the fabrication of all-semiconductor, light-emitting spintronic devices using III-V heterostructures based on gallium arsenide. Electrical spin injection into a nonmagnetic semiconductor is achieved (in zero magnetic field) using a p-type ferromagnetic semiconductor(10) as the spin polarizer. Spin polarization of the injected holes is determined directly from the polarization of the emitted electroluminescence following the recombination of the holes with the injected (unpolarized) electrons.