Giant tunnelling electroresistance through 2D sliding ferroelectric materials.
Giant tunnelling electroresistance through 2D sliding ferroelectric materials.
复制标题
通过二维滑动铁电材料的巨大隧道电阻。
DOI：
10.1039/d2mh00080f
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发表时间：
2022-03
影响因子：
13.3
通讯作者：
Lei Shen
中科院分区：
文献类型：
--
作者：
Jie Yang;Jun Zhou;Zhaochu Luo;Jing Lu;Jin-Bo Yang;Lei Shen
最近，实验报道了交错双层六方氮化硼（BBN）中的铁电极化及其新颖的滑动反转机制（Science 2021，372，1458; 2021，372，1462），这为实现具有新功能的货车德瓦尔斯（vdW）铁电器件铺平了新的道路。在这里，我们开发VDW滑动铁电隧道结（FTJs）使用滑动铁电BBN单元作为势垒，并通过第一性原理探索它们与不同铁电态和金属接触的输运性质。研究发现，电极/BBN接触电场淬灭了交错BBN中的铁电性，导致非常小的隧穿电阻（TER）。在Au和BN之间插入高迁移率的2D材料可以恢复BBN铁电性，在滑动FTJ中达到10000%的巨大TER。最后，我们研究了金属接触和厚度对滑动FTJ隧穿特性的影响。在vdW滑动FTJ中的巨大TER和多个非易失性电阻态显示了在具有高存储密度的压控纳米存储器中的有希望的应用。
Very recently, ferroelectric polarization in staggered bilayer hexagonal boron nitride (BBN) and its novel sliding inversion mechanism were reported experimentally (Science2021, 372, 1458; 2021, 372, 1462), which paved a new way to realizing van der Waals (vdW) ferroelectric devices with new functionalities. Here, we develop vdW sliding ferroelectric tunnel junctions (FTJs) using the sliding ferroelectric BBN unit as an ultrathin barrier and explore their transport properties with different ferroelectric states and metal contacts via first principles. It is found that the electrode/BBN contact electric field quenches the ferroelectricity in the staggered BBN, resulting in a very small tunnelling electroresistance (TER). Inserting high-mobility 2D materials between Au and BN can restore the BBN ferroelectricity, reaching a giant TER of ∼10 000% in sliding FTJs. We finally investigate the metal-contact and thickness effect on the tunnelling property of sliding FTJs. The giant TER and multiple non-volatile resistance states in vdW sliding FTJs show promising applications in voltage-controlled nano-memories with ultrahigh storage density.