AMPHOTERIC NATIVE DEFECTS IN SEMICONDUCTORS
AMPHOTERIC NATIVE DEFECTS IN SEMICONDUCTORS
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DOI：
10.1063/1.101174
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发表时间：
1989-05-22
影响因子：
4
通讯作者：
WALUKIEWICZ, W
中科院分区：
文献类型：
--
作者：
WALUKIEWICZ, W
我们表明，一个新的概念，两性天然缺陷与强烈的费米能级依赖的缺陷形成能量提供了一个统一的解释，在半导体中的各种现象的基础。肖特基势垒的形成，粒子辐照引起的补偿，掺杂引起的超晶格混合，和自由载流子浓度的限制第一次找到了一个共同的简单的解释。半导体材料制备过程中的（或本征）缺陷和/或或处理是最重要的，因为如此多的电子和结构特性关键地取决于这种缺陷的存在。在这封信中，我们提出了一个简单的和一般的理论，它提供了一个统一的理解的因素影响的丰度和反应的简单的天然缺陷在半导体。该理论是基于最近引入的两性天然缺陷的概念。2，3在这一基本概念的一个大的多样性，显然无关的现象，如肖特基势垒的形成，补偿的电活动在粒子辐照的半导体，dopinginduced超晶格混合，和限制自由载流子浓度可以理解，为第一次，在一个单一的统一主题。
We show that a new concept of amphoteric native defects with strongly Fermi level dependent defect formation energy provides the basis for a unified explanation of a large variety of phenomena in semiconductors. Formation of Schottky barriers, particle irradiation induced compensation, doping-induced superlattice intermixing, and limits of free-carrier concentration find for the first time a common simple explanation.Identification of the processes controlling the incorporation of native (or intrinsic) defects during semiconductor material preparation and/or processing is of primary importance since so many electronic and structural properties critically depend on the presence of such defects.! In this letter we present a simple and general theory which provides a unified understanding of the factors affecting the abundances and reactions of simple native defects in semiconductors. The theory is based on a recently introduced concept of amphoteric native defects. 2, 3 Within this fundamental concept a large multiplicity of apparently unrelated phenomena such as Schottky barrier formation, compensation of electrical activity in particle-irradiated semiconductors, dopinginduced superlattice intermixing, and limits of free-carrier concentration can be, for the first time, understood in terms of a single unifying theme.