Phase change random access memory cell with superlattice-like structure
Phase change random access memory cell with superlattice-like structure
复制标题
DOI：
10.1063/1.2181191
复制
发表时间：
2006-03-20
影响因子：
4
通讯作者：
Tung, CH
中科院分区：
文献类型：
--
作者：
Chong, TC;Shi, LP;Tung, CH
在相变随机存储器(PCRAM)单元中引入了一种超晶格结构(SLL)，该结构包含了两种前景不佳的相变材料。设计合理的SLL结构可以平衡PCRAM的相变速度和稳定性。此外，SLL PCRAM单元具有较低的编程电流和5 ns的快速工作时间。性能优异的主要原因是SLL材料的导热系数比块体材料低得多。8层SLL循环的导热系数小于单层材料的30%。
A superlattice-like structure (SLL) incorporating two nonpromising phase change materials was applied to phase change random access memory (PCRAM) cell. A properly designed SLL structure could balance both the phase change speed and stability of a PCRAM. Moreover, SLL PCRAM cells exhibited lower programming current and fast working time of 5 ns. The main reason for the excellent performances is due to the much lower thermal conductivity of the SLL material compared to that of bulk materials. The thermal conductivity of eight SLL layers cycle was found to be smaller than 30% of that of single layer material.