Schottky Barrier Height Between Erbium Silicide and Various Morphology of Si (100) Surface Changed by Alkaline Etching
Schottky Barrier Height Between Erbium Silicide and Various Morphology of Si (100) Surface Changed by Alkaline Etching
复制标题
硅化铒的肖特基势垒高度与碱性蚀刻改变的Si(100)表面的各种形貌
DOI：
10.1149/05807.0349ecst
复制
发表时间：
2013
期刊：
影响因子：
--
通讯作者：
and Tadahiro Ohmi
中科院分区：
文献类型：
--
作者：
Hiroaki Tanaka;Akinobu Teramoto;Shigetoshi Sugawa;and Tadahiro Ohmi
研究了碱性溶液腐蚀n型Si(100)表面ErSix的电学和物理性质。Si表面的(111)面影响ErSix和n型Si之间的SBH，因为SBH取决于Si的表面取向。控制取向面是降低高性能MISFET接触电阻的关键参数。这些硅化反应对大电流驱动器件的研制具有重要意义。
Electrical and physical properties of ErSix on n-type Si (100) surfaces with an alkaline solution etching are investigated. The (111) facet of Si surface affects the SBH between ErSix and n-type Si, because the SBH depends on the surface orientation of Si. A controlling the facet of orientation is a key parameter for a reducing contact resistance for high performance MISFETs. These silicidation reactions are very important to develop the high current drivability devices.