Impact of Zr addition on properties of atomic layer deposited HfO2
Impact of Zr addition on properties of atomic layer deposited HfO2
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DOI：
10.1063/1.2208558
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发表时间：
2006-06
影响因子：
4
通讯作者：
D. Triyoso;R. Hegde;J. Schaeffer;D. Roan;P. Tobin;S. Samavedam;B. White;R. Gregory;X. Wang
中科院分区：
文献类型：
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作者：
D. Triyoso;R. Hegde;J. Schaeffer;D. Roan;P. Tobin;S. Samavedam;B. White;R. Gregory;X. Wang
采用卢瑟福背散射、X射线衍射（XRD）、透射电子显微镜和原子力显微镜（AFM）研究了Zr添加对高温处理后HfO 2微观结构的影响。薄膜中的ZrO 2含量从0.25%变化到75%。XRD分析表明，添加>50%的ZrO 2导致HfxZr 1 − xO 2合金的四方相部分稳定。原子力显微镜图像显示更小的晶粒与Zr添加。与HfO 2相比，导电AFM在HfxZr 1 − xO 2中显示出更均匀和更紧密的隧穿电流分布。在HfO 2和HfxZr 1 − xO 2金属氧化物半导体电容器上进行的恒定电容-电压应力表明，添加Zr会降低电荷捕获。
The impact of Zr addition on microstructure of HfO2 after high temperature processing was investigated using Rutherford backscattering, x-ray diffraction (XRD), transmission electron microscopy, and atomic force microscopy (AFM). The ZrO2 content in the films was varied from ∼25% to 75%. XRD analysis shows that adding >50% ZrO2 leads to partial stabilization of tetragonal phase of the HfxZr1−xO2 alloy. AFM images revealed smaller grains with Zr addition. Conducting AFM showed more uniform and tighter tunneling current distribution in HfxZr1−xO2 compared to HfO2. Constant capacitance-voltage stressing performed on HfO2 and HfxZr1−xO2 metal-oxide-semiconductor capacitors indicated reduced charge trapping with Zr addition.