Effect of bias voltage on A1N thin films prepared by electron shower method
Effect of bias voltage on A1N thin films prepared by electron shower method
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DOI：
10.1016/0040-6090(96)08636-1
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发表时间：
1996-08
期刊：
影响因子：
2.1
通讯作者：
M. Ishihara;H. Yumoto;T. Tsuchiya;K. Akashi
中科院分区：
文献类型：
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作者：
M. Ishihara;H. Yumoto;T. Tsuchiya;K. Akashi
当AlN薄膜应用于声表面波器件时，纵波和横波分别需要c轴和a轴取向的薄膜。然而，通过溅射和离子镀很难制备a轴取向薄膜。然而，通过电子簇射法制备了a轴取向薄膜，并且通过-200V的负偏压可以将薄膜转变为c轴取向。薄膜中O的浓度随着负偏压的增加而降低。这些 AlN 薄膜含有 20 at.% N，这与偏置电压无关。
When AlN thin films are applied to surface acoustic wave devices, c-axis-and a-axis-oriented films are necessary for longitudinal and transverse waves respectively. However, it is difficult to prepare a-axis-oriented films by sputtering and ion plating. Nevertheless, a-axis-oriented films have been prepared by the electron shower method, and the films can be changed to c-axis orientation by a negative bias of− 200 V. The concentration of O in the films decreases with increasing negative bias voltage. These AlN films contain 20 at.% N, which is independent of the bias voltage.