Molecular Dynamics Simulation of Heat Transport in Silicon Nano-structures Covered with Oxide Films
Molecular Dynamics Simulation of Heat Transport in Silicon Nano-structures Covered with Oxide Films
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DOI：
10.1143/jjap.49.04dn08
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发表时间：
2010-04
影响因子：
1.5
通讯作者：
T. Zushi;Y. Kamakura;K. Taniguchi;I. Ohdomari;Takanobu Watanabe
中科院分区：
文献类型：
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作者：
T. Zushi;Y. Kamakura;K. Taniguchi;I. Ohdomari;Takanobu Watanabe
我们进行了一系列分子动力学（MD）模拟来研究Si纳米结构中的热传递，同时首次在模拟系统中明确地包括氧化物覆盖层。研究了热扩散速度对SiO2薄膜厚度和Si晶格厚度的影响。结果表明，热扩散速度随Si晶格厚度的增加而减小，而与SiO2薄膜厚度无关。
We perform a series of molecular dynamics (MD) simulations to investigate the heat transport in Si nano-structures, while explicitly including oxide cover layers in the simulation system for the first time. The dependences of thermal diffusion velocity on the thicknesses of the SiO2 film and Si lattice are investigated. The results show that thermal diffusion velocity decreases with Si lattice thickness and does not depend on SiO2 film thickness.