Charge injection barriers and chemical interaction at the CdTe/NbSe2 interface
Charge injection barriers and chemical interaction at the CdTe/NbSe2 interface
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DOI：
10.1063/1.3533424
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发表时间：
2011-01
影响因子：
3.2
通讯作者：
M. Wolak;S. Gutmann;M. Conrad;M. Beerbom;C. Ferekides;R. Schlaf
中科院分区：
文献类型：
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作者：
M. Wolak;S. Gutmann;M. Conrad;M. Beerbom;C. Ferekides;R. Schlaf
用光电子能谱研究了CdTe/NbSe_2界面的能带排列和化学相互作用。NbSe 2是具有金属性质和大功函数的层状金属二硫属化物。这使其成为CdTe薄膜太阳能电池背接触材料的潜在候选材料。通过逐步原位沉积NbSe 2和随后的表征与X射线和紫外光电子能谱的界面进行了研究。实验表明，Te和Se在界面处发生互扩散，形成梯度扩散层。由此产生的能带对准指示导致NbSe 2费米能级的中间带隙对准的界面偶极子的形成。
The band line-up and the chemical interaction at the CdTe/NbSe2 interface were investigated with photoemission spectroscopy. NbSe2 is a layered metal dichalcogenide with metallic properties and a large work function. This makes it a potential candidate as back contact material for CdTe thin film solar cells. The interface was investigated by stepwise in situ deposition of NbSe2 and subsequent characterization with x-ray and ultraviolet photoemission spectroscopy. The experiments showed that Te and Se interdiffuse at the interface, causing the formation of a graded diffusion layer. The resulting band alignment indicates the formation of an interface dipole leading to a midband gap alignment of the NbSe2 Fermi level.