Room temperature asymmetric negative differential resistance characteristics of AlGaN/GaN resonant tunneling diodes grown by metal-organic chemical vapor deposition
Room temperature asymmetric negative differential resistance characteristics of AlGaN/GaN resonant tunneling diodes grown by metal-organic chemical vapor deposition
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DOI：
10.1016/j.sse.2021.108195
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Yue Hao
中科院分区：
文献类型：
--
作者：
Wen-Lu Yang;Lin-An Yang;Xiao-Yu Zhang;Yang Li;Xiao-Hua Ma;Yue Hao
