Force microscopy imaging of photopatterned organosilane monolayers: application to probe alignment in AFM patterning following photolithography
Force microscopy imaging of photopatterned organosilane monolayers: application to probe alignment in AFM patterning following photolithography
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光图案化有机硅烷单层的力显微镜成像：在光刻后 AFM 图案化中探针对准的应用
DOI：
10.1007/s003390051176
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
N. Nakagiri
中科院分区：
文献类型：
--
作者：
H. Sugimura;N. Nakagiri
抽象的。在真空紫外光照射下，光掩模图形被转移到自组装的有机硅烷单分子膜上，通过光化学降解辐照区域的单分子膜。因此，单分子层被证明用作光致抗蚀剂。用原子力显微镜(AFM)观察了单层抗蚀剂在不同成像模式下的光刻图形。在不显影曝光的单层抗蚀剂的情况下，基于降解和未降解单层区域之间的化学性质的差异，通过接触式AFM模式的侧向力显微镜或间歇接触式AFM模式的相衬成像，可以清楚地成像图案--即潜像。光降解区域表现出比未照射区域更强的粘附力。此外，由于单层光致抗蚀剂与非光致抗蚀剂在机械性能上的差异，利用力调制显微镜可以对单层抗蚀剂上的潜像进行成像。使用这样的力显微镜图像，AFM探针被精确地对准到光印图案上的特定位置，以便通过AFM光刻绘制额外的图案。
Abstract. Photomask patterns were transferred to a self-assembled organosilane monolayer by vacuum ultraviolet irradiation through the photochemical degradation of the monolayer in the irradiated area. The monolayer was thus demonstrated to serve as a photoresist. The photofabricated patterns on the monolayer resists were observed by atomic force microscopy (AFM) in various imaging modes. Without developing the exposed monolayer resist, the patterns--that is, the latent images--were clearly imaged by lateral force microscopy in contact AFM mode or phase contrast imaging in intermittent contact AFM mode, based on the differences in chemical properties between the degraded and undegraded monolayer regions. The photodegraded region showed stronger adhesive force than the unirradiated region. In addition, the latent image on the monolayer resist could be imaged by force modulation microscopy because of the differences in mechanical properties between the photoirradiated and unirradiated monolayer regions. Using such force microscopy images, an AFM probe was accurately aligned to a specific location on the photoprinted pattern in order to draw an additional pattern by AFM lithography.