Enhanced hole mobilities in surface-channel strained-Si p-MOSFETs
Enhanced hole mobilities in surface-channel strained-Si p-MOSFETs
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表面沟道应变 Si p-MOSFET 中增强的空穴迁移率
DOI：
10.1109/iedm.1995.499251
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
J. Gibbons
中科院分区：
文献类型：
--
作者：
K. Rim;J. Welser;J. Hoyt;J. Gibbons
首次报道了采用赝晶应变硅层的表面沟道p-MOSFET中空穴迁移率的应变依赖性。随着弛豫Si/sub 1-x/Ge/sub x/缓冲层中Ge含量的增加，空穴迁移率的增强与应变大致呈线性关系。当与x=0.1的器件相比时，x=0.22和0.29的器件分别表现出1.4和1.8的空穴迁移率增强因子。尽管在我们的栅极氧化物中的高固定电荷，具有Ge含量x=0.29的器件仍然表现出具有最先进的氧化物的体硅MOSFET的迁移率的1.3倍。还报道了亚微米应变硅p-MOSFET中的介电常数增强的首次测量结果。
The strain dependence of the hole mobility in surface-channel p-MOSFETs employing pseudomorphic, strained-Si layers is reported for the first time. The hole mobility enhancement is observed to increase roughly linearly with the strain as the Ge content in the relaxed Si/sub 1-x/Ge/sub x/ buffer layer increases. When compared to the device with x=0.1, the devices with x=0.22 and 0.29 exhibit hole mobility enhancement factors of 1.4 and 1.8, respectively. In spite of the high fixed charge in our gate oxides, the device with Ge content x=0.29 still exhibits a mobility 1.3 times that of bulk Si MOSFETs with state-of-the-art oxides. The first measurements of the transconductance enhancements in submicron strained-Si p-MOSFETs are also reported.