Temperature dependence and silane consumption during particle formation in Ar-silane RF capacitively coupled plasma
Temperature dependence and silane consumption during particle formation in Ar-silane RF capacitively coupled plasma
复制标题
Ar-硅烷射频电容耦合等离子体中颗粒形成过程中的温度依赖性和硅烷消耗
DOI：
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发表时间：
2004
影响因子：
1.5
通讯作者：
W. Stoffels
中科院分区：
文献类型：
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作者：
M. Sorokin;G. Kroesen;W. Stoffels
我们提出了一个基于简单平衡方程的广义模型，解释了Ar-SiH/sub 4/等离子体中纳米团簇凝聚时间的温度依赖性。该模型可以很容易地纳入特定的机制和验证其对颗粒生长的影响。我们认为额外的硅烷消耗由于背扩散，实验室等离子体实验和建模结果解释的一个重要问题。
We propose a generalized model, based on a simple balance equation, explaining the temperature dependence of the agglomeration time of nanoclusters in Ar-SiH/sub 4/ plasmas. This model allows easy incorporation of specific mechanisms and verification of their effect on particle growth. We consider extra silane consumption due to back diffusion, an important issue for the laboratory plasma experiments and modeling results interpretation.