Growth and Device Characteristics of CZTSSe Thin-Film Solar Cells with 8.03% Efficiency
Growth and Device Characteristics of CZTSSe Thin-Film Solar Cells with 8.03% Efficiency
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DOI：
10.1021/acs.chemmater.5b01181
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发表时间：
2015-08-11
影响因子：
8.6
通讯作者：
Kang, Jin-Kyu
中科院分区：
文献类型：
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作者：
Son, Dae-Ho;Kim, Dae-Hwan;Kang, Jin-Kyu
提高Cu2ZnSn-(S,Se)(4) (CZTSSe)基太阳能电池的效率需要在整个薄膜中形成高晶粒尺寸的纯CZTSSe。我们已经在几乎密封的硒炉中成功地对 Cu/SnS/ZnS/Mo/钠钙玻璃的前体样品进行硒化。由于炉内存在受限且高压的Se蒸气，Se很容易扩散到前驱体样品中，并获得了高质量的富硒CZTSSe吸收剂。为了了解前驱体和退火系统中生长机制的影响，本研究检查了相演化和晶粒形成。从材料微观结构的角度讨论器件参数以提高性能。在570℃的硒化温度下，CZTS Se薄膜显示出完全发育的晶粒，尺寸约为2μm，在Mo背接触附近没有明显的孔隙发育。层厚约为1.2μm，获得了效率高达8.03%的太阳能电池。对器件的详细电气分析表明，器件的性能主要与分流电阻有关。
The improvement of the efficiency of Cu2ZnSn-(S,Se)(4) (CZTSSe)-based solar cells requires the formation of high-grain-sized pure CZTSSe throughout the film. We have successfully selenized precursor samples of Cu/SnS/ZnS/Mo/Soda lime glass in an almost sealed selenium furnace. Owing to the presence of confined and high-pressure Se vapor in the furnace, Se easily diffused into the precursor samples, and high-quality Se-rich CZTSSe absorbers were obtained. To understand the effect of the growth mechanism in our precursor and annealing system, this study examines the phase evolution and grain formation. Device parameters are discussed from the perspective of a material microstructure in order to improve performance. At a selenization temperature of 570 degrees C, a CZTS Se film showed fully developed grains with a size of around 2 mu m without noticeable pore development near the Mo back contact. Solar cells with up to 8.03% efficiency were obtained with a layer thickness of about 1.2 mu m. Detailed electrical analysis of the device indicated that the performance of the device is mainly associated with shunt resistance.