Temperature dependence of magnetization in arrays of submicrometer Fe disks
Temperature dependence of magnetization in arrays of submicrometer Fe disks
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DOI：
10.1063/1.2123373
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发表时间：
2005-11
影响因子：
3.2
通讯作者：
Y. Takagaki;J. Herfort;K. Ploog
中科院分区：
文献类型：
--
作者：
Y. Takagaki;J. Herfort;K. Ploog
我们研究了由生长在GaAs(001)上的外延Fe层制成的亚微米级磁盘阵列中的磁化强度。当其直径约为100 nm时，层厚度为20 nm的铁盘经历多个磁区和单个磁区之间的转变。在磁化特性中发现了显著的温度依赖性。(1)饱和磁化强度随温度降低而增大。虽然低温增加对于较小的磁盘直径更为显著，但它与磁盘中的磁畴状态无关。(2)超小磁盘的磁滞回线在低温下表现出类双组分行为。随着温度的降低而产生的附加成分导致了磁化强度的缓慢饱和，这可能是饱和磁化强度低温增加的原因。
We investigate the magnetization in the arrays of submicrometer-size disks fabricated from an epitaxial Fe layer grown on GaAs(001). The Fe disks having a layer thickness of 20nm undergo a transition between multiple and single magnetic domains when their diameter is about 100nm. Remarkable temperature dependence is found in the characteristics of the magnetization. (1) The saturation magnetization increases with decreasing temperature. While the low-temperature increase is more pronounced for smaller disk diameters, it is independent of the magnetic-domain state in the disks. (2) Magnetic hysteresis exhibits two-component-like behavior at low temperatures for ultrasmall disks. The additional component that emerges with lowering temperature gives rise to slow saturation of the magnetization, and is possibly responsible for the low-temperature increase of the saturation magnetization.