ELECTRON EMISSION FROM A (100) TUNGSTEN SURFACE UNDER PROTON BOMBARDMENT.
ELECTRON EMISSION FROM A (100) TUNGSTEN SURFACE UNDER PROTON BOMBARDMENT.
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DOI：
10.1103/physrev.166.324
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发表时间：
1968
期刊：
影响因子：
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通讯作者：
R. Ewing
中科院分区：
文献类型：
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作者：
R. Ewing
在正入射质子轰击下，从钨的清洁（100）表面的电子产额被报道为质子能量在50至225 keV范围内的函数。在能量为125 keV时，最大产额为1.51\ifmmode\pm\else\textpm\fi{}0.03电子/入射质子.（100）平面的产率比多晶表面的产率低（10\ifmmode\pm\else\textpm\fi{}2）%。这种差异可以归因于（100）表面的较高功函数。钨表面是通过在真空室中将单晶钨带快速加热到2400 K来清洁的，真空室中的总压力约为2 ${10}^{-}10}$托。在清洁表面后约2分钟，在室温下用表面测量产率，而在表面上形成单层残余气体的时间大于2小时。
The yield of electrons from a clean (100) surface of tungsten under bombardment by protons at normal incidence is reported as a function of proton energy in the range 50 to 225 keV. The maximum value of the yield is 1.51\ifmmode\pm\else\textpm\fi{}0.03 electrons per incident proton at a proton energy of 125 keV. The yield from the (100) plane surface fell (10\ifmmode\pm\else\textpm\fi{}2)% below the yield from a polycrystalline surface. This difference can be attributed to the higher work function of the (100) surface. The tungsten surface was cleaned by flash-heating a single-crystal tungsten ribbon to 2400\ifmmode^\circ\else\textdegree\fi{}K in a vacuum chamber in which the total pressure was about 2\ifmmode\times\else\texttimes\fi{}${10}^{\ensuremath{-}10}$ Torr. The yield was measured with the surface at room temperature, about 2 min after the surface was cleaned, while the time for a monolayer of residual gases to form on the surface was greater than 2 h.