RC-coupled ferromagnetic single-electron transistors
RC-coupled ferromagnetic single-electron transistors
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RC 耦合铁磁单电子晶体管
DOI：
10.1063/1.1539073
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发表时间：
2003
影响因子：
3.2
通讯作者：
Y. Takemura
中科院分区：
文献类型：
--
作者：
J. Shirakashi;Y. Takemura
本文定量地研究了由栅电阻和栅电容串联耦合到控制栅电位的铁磁单电子晶体管的工作。在这种类型的器件中，在库仑阻塞的范围内可能存在几种亚稳态电荷状态。预测了隧道磁电阻效应对漏极和栅极电压的增强和滞后效应。电荷的非弹性宏观量子隧穿和多个电荷态的存在对隧道磁电阻的独特行为起着重要的作用。这意味着RC耦合铁磁单电子晶体管具有作为新型磁阻纳米结构器件的功能。
We study quantitatively the operation of ferromagnetic single-electron transistors coupled to the controlling gate potential by the gate resistance and gate capacitance in series. In this type of the device, several metastable charge states are possible within the range of Coulomb blockade. The enhancement and hysteresis of tunnel magnetoresistance on the drain and gate voltages are predicted. The inelastic macroscopic quantum tunneling of charge and the existence of several charge states play an important role in the unique behavior of tunnel magnetoresistance. This implies that RC-coupled ferromagnetic single-electron transistors have a functionality as novel magnetoresistive nanostructure devices.