A bilateral comparison of on-wafer S-parameter measurements at millimeter wavelengths
A bilateral comparison of on-wafer S-parameter measurements at millimeter wavelengths
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毫米波长晶圆上 S 参数测量的双边比较
DOI：
10.1109/arftg.2007.5456342
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
N. Ridler
中科院分区：
文献类型：
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作者：
R. Clarke;Jemeela Quraishi;N. Ridler
本文报道了最近发生的两个英国的测量设施-利兹大学和国家物理实验室之间的测量比较。该比较涉及对市售的共面波导校准基板进行复杂的S参数测量。大多数测量是在高达65 GHz的频率下进行的，尽管一些测量数据是在高达110 GHz的频率下获得的。附属调查还着眼于测量的可重复性和使用不同的VNA校准方案的影响。作为频率的函数影响这些测量的可能的误差过程的故障也导致这种测量的基本不确定性估计。
This paper reports on a comparison of measurements that has taken place recently between two UK-based measurement facilities - the University of Leeds and the National Physical Laboratory. The comparison involved making complex S-parameter measurements of a commercially available co-planar waveguide calibration substrate. Most measurements were made at frequencies up to 65 GHz, although some measurement data was obtained up to 110 GHz. Subsidiary investigations also looked at measurement repeatability and the effects of using different VNA calibration schemes. A breakdown of the likely error processes affecting these measurements as a function of frequency is also given leading to rudimentary uncertainty estimates for such measurements.