Fe impurity-induced electronic states at the GaAs(110) surface
Fe impurity-induced electronic states at the GaAs(110) surface
复制标题
GaAs(110) 表面 Fe 杂质诱导的电子态
DOI：
10.1103/physrevb.88.115301
复制
发表时间：
2013
影响因子：
3.7
通讯作者：
R. Berndt
中科院分区：
文献类型：
--
作者：
S. Mühlenbehrend;M. Gruyters;R. Berndt
用扫描隧道显微镜（STM）和能谱研究了GaAs（110）表面单个Fe原子的电子性质。在STM图像中，Fe原子显示出具有与GaAs衬底晶格匹配的取向的特征结构。Fe被假定为占据表面中的替代位点。在Fe上的微分电导的光谱揭示了几个不同的峰。它们被讨论的背景下，起源于杂交betweebetals的Fe原子和相邻的原子的类轨道的电子状态。
The electronic properties of single Fe atoms in the surface of-type GaAs(110) are investigated by scanning tunneling microscopy (STM) and spectroscopy. In STM images, Fe atoms show a characteristic structure with an orientation that matches the GaAs substrate lattice. Fe is assumed to occupy substitutional sites in the surface. Spectra of the differential conductance on Fe reveal several distinct peaks. They are discussed in the context of electronic states that originate from hybridization betweenorbitals of the Fe atom and-like orbitals of neighboring As atoms.