Spin-orbit-torque engineering via oxygen manipulation
Spin-orbit-torque engineering via oxygen manipulation
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DOI：
10.1038/nnano.2015.18
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发表时间：
2015-04-01
影响因子：
38.3
通讯作者：
Yang, Hyunsoo
中科院分区：
文献类型：
--
作者：
Qiu, Xuepeng;Narayanapillai, Kulothungasagaran;Yang, Hyunsoo
自旋转移扭矩允许在室温下对磁化进行电操作，这在自旋转移扭矩存储器等自旋电子器件中是可取的。当它们与自旋-轨道耦合结合在一起时，它们产生了自旋-轨道力矩，这是控制磁化的更强大的工具，可以丰富设备的功能。主要基于自旋霍尔效应的自旋轨道力矩工程正受到密切关注。在这里，我们报道了自旋-轨道-扭矩装置的氧化触发了一种新的自旋-轨道扭矩机制，其强度大约是基于自旋霍尔效应的机制的两倍。因此，我们介绍了一种通过氧气操纵来设计自旋轨道力矩的方法。结合氧气水平的电子门控，我们的发现也可能为可重新配置的逻辑器件铺平道路。
Spin transfer torques allow the electrical manipulation of magnetization at room temperature, which is desirable in spintronic devices such as spin transfer torque memories. When combined with spin-orbit coupling, they give rise to spin-orbit torques, which are a more powerful tool for controlling magnetization and can enrich device functionalities. The engineering of spin-orbit torques, based mostly on the spin Hall effect, is being intensely pursued. Here, we report that the oxidation of spin-orbit-torque devices triggers a new mechanism of spin-orbit torque, which is about two times stronger than that based on the spin Hall effect. We thus introduce a way to engineer spin-orbit torques via oxygen manipulation. Combined with electrical gating of the oxygen level, our findings may also pave the way towards reconfigurable logic devices.