Growth of molybdenum and tungsten on GaAs in a molecular beam epitaxy system
Growth of molybdenum and tungsten on GaAs in a molecular beam epitaxy system
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分子束外延系统中 GaAs 上钼和钨的生长
DOI：
10.1063/1.95772
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发表时间：
1985
影响因子：
4
通讯作者：
Y. Komem
中科院分区：
文献类型：
--
作者：
J. Bloch;M. Heiblum;Y. Komem
在分子束外延系统中，在（100）GaAs上生长Mo和W薄膜。Mo在200 ~ 450 °C之间外延生长，其（111）面平行于（100）GaAs面。W以无规多晶存款形式生长。对于这两种金属，在500 °C下生长期间发生与GaAs的相互作用。通过电流和电容测量确定的肖特基势垒高度表明，金属-GaAs界面的电学性质并不强烈依赖于薄膜的生长温度和微观结构。
Thin films of Mo and W were grown on top of (100) GaAs in a molecular beam epitaxy system. Mo grew epitaxially between 200 and 450 °C with its (111) plane parallel to (100) GaAs plane. W grew as a random polycrystalline deposit. For both metals, interaction with the GaAs occurred during growth at 500 °C. Schottky barrier heights determined by current and capacitance measurements show that the electrical properties of the metal‐GaAs interface do not strongly depend on the growth temperature and the microstructure of the films.