Focused Si Ion Implantation in GaAs
Focused Si Ion Implantation in GaAs
复制标题
GaAs 中的聚焦硅离子注入
DOI：
10.1143/jjap.22.l650
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发表时间：
1983
影响因子：
1.5
通讯作者：
H. Hashimoto
中科院分区：
文献类型：
--
作者：
Y. Bamba;E. Miyauchi;H. Arimoto;K. Kuramoto;A. Takamori;H. Hashimoto
使用带有 Au-Si-Be 合金离子源的 100 kV 无掩模注入机在 MBE-GaAs 中进行 160 keV 亚微米聚焦 Si 离子注入。获得的拉曼光谱表明，与未聚焦离子束的注入电流密度相比，聚焦离子束的较高电流密度（约高104倍）导致较少的注入诱导损伤和残余损伤（退火至500°C后）。此外，850°C 退火导致聚焦注入的硅离子具有更高的电活性，但光学质量与传统注入几乎相同。
A 160-keV, submicron-focused Si ion implantation in MBE-GaAs was made using a 100 kV maskless implanter with a Au–Si–Be alloy ion source. Obtained Raman spectra indicated that compared with the implantation current densities of an unfocused ion beam, the higher current density (about 104 times greater) of the focused beam resulted in less implantation-induced and residual (after annealing up to 500°C) damage. Moreover, 850°C annealing led to a higher electrical activity of focused implanted Si-ions but almost the same optical quality of conventional implantation.