Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm
Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm
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DOI：
10.1063/1.1507357
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发表时间：
2002-09-16
影响因子：
4
通讯作者：
Aoyagi, Y
中科院分区：
文献类型：
--
作者：
Matsuda, K;Saiki, T;Aoyagi, Y
利用低温近场扫描光学显微镜实现了半导体量子点的高分辨率光致发光成像。我们系统地评估了不同孔径的光纤探头的空间分辨率，这些光纤探头的孔径从30到135 nm不等。由于探针制备的改进和样品结构的优化，我们在自组装InAs量子点的荧光成像中获得了30 nm的空间分辨率(类似于tolambda/30：lambda=930 nm)。本研究获得的空间分辨率是在半导体量子组分的尺度上进行的，这将使绘制和操纵量子受限系统中的波函数成为可能。(C)2002年美国物理研究所。
High-resolution photoluminescence (PL) imaging of semiconductor quantum dots (QDs) was demonstrated using a low-temperature near-field scanning optical microscope. We systematically evaluated the spatial resolution for various fiber probes with different aperture diameters ranging from 30 to 135 nm. We achieved a spatial resolution of 30 nm (similar tolambda/30:lambda=930 nm) in the PL imaging of self-assembled InAs QDs due to both improvement in probe preparation and optimization of the sample structure. The spatial resolution obtained in this study is on the scale of semiconductor quantum constituents and will make it possible to map out and manipulate the wave function in quantum-confined systems. (C) 2002 American Institute of Physics.