Extremely low temperature coefficient of resistance in antiperovskite Mn3Ag1−xCuxN
Extremely low temperature coefficient of resistance in antiperovskite Mn3Ag1−xCuxN
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DOI：
10.1063/1.3541449
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发表时间：
2011-01
影响因子：
4
通讯作者：
K. Takenaka;A. Ozawa;T. Shibayama;N. Kaneko;T. Oe;C. Urano
中科院分区：
文献类型：
--
作者：
K. Takenaka;A. Ozawa;T. Shibayama;N. Kaneko;T. Oe;C. Urano
系统地研究了Mn 3AgN及相关反钙钛矿结构化合物的电阻率。尽管Mn 3AgN具有整体金属特性，但其在顺磁状态下的温度-电阻率曲线中具有宽的最大值，并且电阻温度系数（TCR）在较高温度下为负。通过Cu部分取代Ag，将磁导率峰值温度调整到室温，并且在包括室温在内的宽温度窗口内实现了低至10−6 K−1的TCR。这些奇特的行为可能是由于强磁散射导致的相干准粒子态的坍缩。
Electrical resistivity is systematically investigated in Mn3AgN and related compounds with an antiperovskite structure. Despite its overall metallic character, Mn3AgN features a broad maximum in the temperature-resistivity curve in the paramagnetic state and the temperature coefficient of resistance (TCR) is negative at higher temperatures. The resistivity-peak temperature was tuned to just room temperature by the partial substitution of Cu for Ag, and a TCR as low as 10−6 K−1 was achieved over a wide temperature window including room temperature. These peculiar behaviors are possibly due to collapse of coherent quasiparticle states by strong magnetic scattering.