Large enhancement of emergent magnetic fields in MnSi with impurities and pressure
Large enhancement of emergent magnetic fields in MnSi with impurities and pressure
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DOI：
10.1103/physrevb.88.214406
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发表时间：
2013-12-10
影响因子：
3.7
通讯作者：
Lee, Minhyea
中科院分区：
文献类型：
--
作者：
Chapman, Benjamin J.;Grossnickle, Maxwell G.;Lee, Minhyea
我们报道了铁掺杂MnSi的拓扑霍尔效应（the）的研究，并将其与纯MnSi在压力下的结果进行了比较。我们发现Fe的掺杂增加了the，表明出射规范场的大小增强。这与skyrmion晶格长度尺度的同时减小是一致的。对于加压和掺杂样品，我们根据测量的the的大小计算出紧急磁场，并将其与理论上界进行比较。我们发现这两者的比例在压力或Fe掺杂下基本保持恒定，但在环境压力下与纯MnSi的比例有很大不同。我们讨论了这一比值对饱和磁矩和螺旋螺距长度随掺杂和压力的变化趋势的影响。
We report a study of the topological Hall effect (THE) in Fe-doped MnSi and compare it with results from pure MnSi under pressure. We find that Fe doping increases the THE, indicating an enhancement of the magnitude of the emergent gauge field. This is consistent with the concurrent reduction in the length scale of the skyrmion lattice. For both pressurized and doped samples, we calculate the emergent magnetic field based on the size of the measured THE and compare it with a theoretical upper bound. We find that the ratio of these two remains more or less constant with pressure or Fe doping but differs greatly from that of pure MnSi at ambient pressure. We discuss the implications of this ratio with respect to trends in the saturated magnetic moment and helical pitch length as T-C -> 0 via doping and pressure, respectively.