Nature of chemical states of sulfur embedded in atomic‐layer‐deposited HfO2 film on Ge substrate for interface passivation
Nature of chemical states of sulfur embedded in atomic‐layer‐deposited HfO2 film on Ge substrate for interface passivation
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Ge 基底上原子层沉积 HfO2 薄膜中嵌入硫的化学态性质，用于界面钝化
DOI：
10.1002/pssr.201510237
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
T. Park
中科院分区：
文献类型：
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作者：
D. Cho;T. Seok;H. Jin;Hochul Song;Seungwu Han;T. Park
Sulfur was embedded in atomic‐layer‐deposited (ALD) HfO2 films grown on Ge substrate by annealing under H2S gas before and after HfO2 ALD. The chemical states of sulfur in the film were examined by S K‐edge X‐ray absorption spectroscopy. It was revealed that the valences of S‐ions were mostly –2 at Ge/HfO2 interface (GeSx or HfO2–ySy to passivate the interface), while they were mostly +6 in HfO2 layers (sulfates; HfO2–z(SO4)z). The leakage current density in post‐deposi‐tion‐treated film was lower than that in pre‐deposition‐treated one. This suggests that the passivation of defects in oxide layer by sulfate ions is more effective to lower the leakage current rather than the interface defect passivation by S2– ions. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)
GeO2/Ge 结构中 GeO 解吸的 180 同位素示踪
DOI：
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发表时间：
2009
期刊：
影响因子：
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作者：
S.Wang;K.Kita;T.Nishimura;K.Nagashio;A.Toriumi
通讯作者：
A.Toriumi