Proton Irradiation Enhancement of Low-Field Negative Magnetoresistance Sensitivity of AlGaN/GaN-Based Magnetic Sensor at Cryogenic Temperature
Proton Irradiation Enhancement of Low-Field Negative Magnetoresistance Sensitivity of AlGaN/GaN-Based Magnetic Sensor at Cryogenic Temperature
复制标题
低温下质子辐照增强 AlGaN/GaN 基磁传感器低场负磁阻灵敏度
DOI：
10.1109/led.2014.2358613
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发表时间：
2014
影响因子：
4.9
通讯作者：
Adarsh Sandhu
中科院分区：
文献类型：
--
作者：
Abdelkader Abderrahmane;Pil Ju Ko;Hiroshi Okada;Shin-Ichiro Sato;Takeshi Ohshima;Adarsh Sandhu
AlGaN/GaN异质结为基础的微霍尔传感器的纵向和横向磁阻进行了比较与样品辐照的质子能量为380 keV和1014（质子/cm 2）的通量。在两个样品中的弹性和非弹性散射的增加推导出弱本地化行为。AlGaN/GaN微霍尔传感器在非和辐照样品中表现出稳定的磁灵敏度，质子辐照后电阻率增加，在非辐照传感器中产生了增强的磁阻灵敏度，从160 VA-1 T-1到417 VA-1 T-1。辐照微霍尔传感器的最小可检测磁场确定从磁电压测量在~4 K是相似的最小可检测磁场在未辐照传感器。
The longitudinal and transverse magnetoresistances of AlGaN/GaN heterostructure-based micro-Hall sensors were compared with samples irradiated with protons with an energy of 380 keV and fluence of 1014 (protons/cm2). Increases in the elastic and inelastic scattering were deduced from weak localization behavior in both samples. The AlGaN/GaN micro-Hall sensors showed stable magnetic sensitivity in non and irradiated samples and increased resistivity after proton irradiation yielded an enhanced magnetoresistance sensitivity in nonirradiated sensors from 160 to 417 VA-1T-1. The minimum detectable magnetic field of irradiated micro-Hall sensors determined from magneto-voltage measurements at ~4 K was similar to the minimum detectable magnetic field in the nonirradiated sensors.