Characteristics of ZnO:Ga thin films prepared by chemical spray using two different Zn and Ga precursors
Characteristics of ZnO:Ga thin films prepared by chemical spray using two different Zn and Ga precursors
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使用两种不同的 Zn 和 Ga 前驱体化学喷涂制备 ZnO:Ga 薄膜的特性
DOI：
10.1002/pssa.200305960
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
A. Maldonado
中科院分区：
文献类型：
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作者：
M. Olvera;A. Maldonado
采用化学喷雾法制备了均匀、无针孔、高质量、可重复性好的掺镓氧化锌薄膜。分析了用两种不同的锌、镓两种源生长的薄膜的电学、结构、形态和光学性质。在45 0~5 2 5℃的温度范围内，在钠钙玻璃衬底上沉积了氧化锌：镓薄膜，经真空热处理后，薄膜的电阻率下降了一个数量级，在5 0 0°C沉积的薄膜的电阻率最小为4.5×0-3Ωcm。择优生长方向取决于镓的来源。在锌源和戊二酸镓作为掺杂剂的薄膜中，主要观察到(101)晶面，而当使用硝酸镓时，(002)晶面是首选的。用扫描电子显微镜和X-射线能谱分别对其晶粒度和微晶尺寸进行了评价。可见光区的平均光学透过率约为85%。
Homogeneous, pinhole free, high quality and reproducible gallium-doped zinc oxide, ZnO : Ga, thin films were deposited by the chemical spray technique. The electrical, structural, morphological and optical properties of films grown from two different Zn and Ga sources were analyzed. ZnO : Ga films were deposited onto heated soda-lime glass substrates at temperatures between 450–525 °C. A resistivity decrease of one order of magnitude was registered after a vacuum thermal process, reaching a minimum value of 4.5 × 0–3 Ω cm for films deposited at 500 °C. Preferential growth orientation was dependent on the Ga source. (101) planes were mainly observed in films deposited from both Zn sources and Ga pentanedionate as dopant, while (002) planes were preferred when Ga nitrate was used. A valuation of grain size and crystallite size from scanning electron microscopy micrographs and X-ray spectra, respectively, was performed. Average optical transmittance in the visible region was of the order of 85%.