Influences of Si addition on the thermal stability and crystallization behavior of Al-Y binary amorphous alloys
Influences of Si addition on the thermal stability and crystallization behavior of Al-Y binary amorphous alloys
复制标题
Si添加对Al-Y二元非晶合金热稳定性和结晶行为的影响
DOI：
10.1016/j.jallcom.2021.159816
复制
发表时间：
2021-08
影响因子：
6.2
通讯作者：
Li J. F.
中科院分区：
文献类型：
--
作者：
Li W.;Yang L.;Zhang Y. G.;Kong L. T.;Li J. F.
采用差示扫描量热法、X射线衍射和透射电子显微镜对（Al 90 Y10）100−xSix（x= 0、1、2、2.5和3at%）非晶合金的晶化行为进行了表征。在Al 90 Y 10基非晶合金中加入Si，使α-Al的初晶化提前到较低温度，抑制了残余非晶相中Al 4 Y的析出，但促进了Al 3 Y的晶化。Si的加入显著稳定了α-Al 3 Y相，使（Al 90 Y10）98 Si 2合金的铸态和完全晶化带均由α-Al和α-Al 3 Y组成，而Al 90 Y10合金中相应的产物为α-Al和β-Al 3 Y。2.5at%Si的加入使α-Al晶化分为两个阶段，两个峰之间的温度间隔为140 K。其原因可能与Si的加入使非晶合金中Y原子的浓度波动增大和晶化过程中Y原子扩散减慢有关。
In the present study, the crystallization behavior of (Al90Y10)100−xSix(x= 0, 1, 2, 2.5 and 3 at%) amorphous alloys were characterized by differential scanning calorimetry, X-ray diffraction and transmission electron microscopy. As Si is added to the Al90Y10base amorphous alloy, the primary crystallization of α-Al is advanced to lower temperature, the precipitation of Al4Y in the residual amorphous phase is depressed but the crystallization of Al3Y is promoted. The Si addition stabilizes the α-Al3Y phase significantly, due to which both the as-cast ingot and the fully crystallized ribbon of (Al90Y10)98Si2alloy consist of α-Al and α-Al3Y, whereas the corresponding products in Al90Y10alloy are α-Al and β-Al3Y. The addition of 2.5 at% Si makes the crystallization of α-Al split into two stages with a temperature interval of 140 K between the two peaks. The reason is thought to be related with the enhanced concentration fluctuation in amorphous alloy and the slower diffusion of Y atoms in crystallization after the Si addition.
登录
查看更多内容
影响因子：
6.2
作者：
Shuhong Liu;Yong Du;Hong-hui Xu;C. He;J. Schuster
通讯作者：
Shuhong Liu;Yong Du;Hong-hui Xu;C. He;J. Schuster
DOI：
10.4028/www.scientific.net/msf.269-272.749
发表时间：
1998-01
期刊：
Materials Science Forum
影响因子：
--
作者：
M. Călin;U. Köster
通讯作者：
M. Călin;U. Köster
DOI：
10.1016/j.actamat.2005.04.034
发表时间：
2005-08
影响因子：
3.6
作者：
K. L. Sahoo;M. Wollgarten;J. Haug;J. Banhart
通讯作者：
K. L. Sahoo;M. Wollgarten;J. Haug;J. Banhart
影响因子：
2.9
作者：
F. G. Cuevas;Sergio Gamaliel Perez;Rosa María Aranda Louvier;R. López
通讯作者：
F. G. Cuevas;Sergio Gamaliel Perez;Rosa María Aranda Louvier;R. López
DOI：
10.1143/jjap.27.l736
发表时间：
1988-05-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
影响因子：
--
作者：
INOUE, A;OHTERA, K;MASUMOTO, T
通讯作者：
MASUMOTO, T