Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator
Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator
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DOI：
10.1063/1.2186072
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发表时间：
2006-03
影响因子：
4
通讯作者：
K. Hirama;S. Miyamoto;H. Matsudaira;K. Yamada;H. Kawarada;T. Chikyo;H. Koinuma;K. Hasegawa;H. Umezawa
中科院分区：
文献类型：
--
作者：
K. Hirama;S. Miyamoto;H. Matsudaira;K. Yamada;H. Kawarada;T. Chikyo;H. Koinuma;K. Hasegawa;H. Umezawa
金属-绝缘体-半导体场效应晶体管（MISFET）与氧化铝作为栅极绝缘体已被制作在氢终止的金刚石表面上使用其表面导电层。采用脉冲激光沉积法在金刚石表面沉积氧化铝栅绝缘层。通过直流测量的开关比大于五个数量级，这是金刚石FET报告的最佳结果之一。氧化铝MISFET的栅极漏电流比传统CaF 2 MISFET的栅极漏电流小三个数量级。这些特性表明氧化铝栅绝缘体适合于金刚石MISFET的高可靠性功率器件应用。
Metal-insulator-semiconductor field-effect transistors (MISFETs) with aluminum oxide as a gate insulator have been fabricated on a hydrogen-terminated diamond surface using its surface conductive layer. The aluminum oxide gate insulator was deposited on the diamond surface by the pulsed laser deposition method. The on-off ratio measured by dc was greater than five orders of magnitude, one of the best results reported for diamond FETs. The gate leak current of aluminum oxide MISFETs is three orders of magnitude less than that of conventional CaF2 MISFETs. These characteristics indicate that aluminum oxide gate insulators are suitable for high reliability power device applications of diamond MISFETs.