Stimulated emission at 474nm from an InGaN laser diode structure grown on a (112¯2) GaN substrate
Stimulated emission at 474nm from an InGaN laser diode structure grown on a (112¯2) GaN substrate
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DOI：
10.1063/1.2799876
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发表时间：
2007-12
影响因子：
4
通讯作者：
K. Kojima;M. Funato;Y. Kawakami;S. Masui;S. Nagahama;T. Mukai
中科院分区：
文献类型：
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作者：
K. Kojima;M. Funato;Y. Kawakami;S. Masui;S. Nagahama;T. Mukai
在室温光泵浦条件下，观察到生长在(112‘2)GaN衬底上的半极性InGaN激光二极管(LD)结构的受激辐射。测得的发射峰在2.62 eV(474 Nm)到3.05 eV(405 Nm)的光子能量范围内，发射强度与泵浦功率存在阈值行为。在[1‘1’23]和[11‘00]两个垂直方向之间观察到了强烈的面内光学各向异性，这是由于各向异性的矩阵元素，这取决于晶体的取向；沿[1’1‘23]方向测量的受激辐射具有较低的阈值泵浦功率，与沿[11’00]方向测得的相比，具有较低的阈值泵浦功率。实验结果和价带计算表明，在半极性和非极性InGaN激光器中，沿[11‘00]方向具有电矢量的横向电模对增益的形成起主导作用。与c平面InGaN激光器相比，半极型InGaN激光器具有相当或更小的寿命。
The stimulated emissions from semipolar InGaN laser diode (LD) structures grown on (112¯2) GaN substrates are observed at room temperature under photopumped conditions. The measured emission peaks are in the photon energy range from 2.62eV (474nm)to3.05eV (405nm), and the emission intensity has a threshold behavior with respect to the pumping power. A strong in-plane optical anisotropy is observed between the two perpendicular directions, [1¯1¯23] and [11¯00], due to anisotropic matrix elements, which depend on the crystal orientation; the stimulated emission measured along the [1¯1¯23] direction occurs with a lower threshold pumping power at a lower energy compared to that obtained along the [11¯00] direction. The experimental results and the valence band calculations indicate that the transverse-electric mode with an electric vector along the [11¯00] direction is dominant for gain formation in semipolar and nonpolar InGaN LDs. Compared to c-plane InGaN LDs, semipolar InGaN LDs have comparable or less th...