Effect of fluorine on chemical and electrical properties of room temperature oxide films prepared by plasma enhanced chemical vapor deposition
Effect of fluorine on chemical and electrical properties of room temperature oxide films prepared by plasma enhanced chemical vapor deposition
复制标题
DOI：
10.1063/1.121027
复制
发表时间：
1998-06
影响因子：
4
通讯作者：
Kihong Kim;Ju-Il Song;D. Kwon;G. Lee
中科院分区：
文献类型：
--
作者：
Kihong Kim;Ju-Il Song;D. Kwon;G. Lee
通过比较氟化氧化硅（SiOF）薄膜和SiO2薄膜的化学和电学性质，研究了氟对SiO2薄膜的影响。采用等离子体增强化学气相沉积（PECVD）技术，以CF 4为氟源，Si 2 H6和N2 O为氧化剂，在室温下制备了SiOF薄膜。的相对介电常数的沉积的SiO2膜的减少，从5.95到4.43，通过掺入氟和与postmetallization退火。对SiOF膜的击穿测量显示，在10.3 MV/cm的场强下没有早期失效，导致平均击穿场强为7.11 MV/cm。
The effect of fluorine on SiO2 films was investigated by comparing chemical and electrical properties of fluorinated silicon oxide (SiOF) films with those of SiO2 films. The SiOF films were prepared at room temperature by plasma enhanced chemical vapor deposition incorporating CF4 as the fluorine source into the deposition process of the SiO2 films using Si2H6 and N2O. The relative dielectric constant of the as-deposited SiO2 films was reduced from 5.95 to 4.43 by the incorporation of fluorine and with postmetallization anneal. The breakdown measurements on the SiOF films showed no early failures at a field strength of ⩽3 MV/cm, resulting in an average breakdown field strength of 7.11 MV/cm.