Local density of states in zero-dimensional semiconductor structures.
Local density of states in zero-dimensional semiconductor structures.
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零维半导体结构中的局域态密度。
DOI：
10.1103/physrevlett.87.196804
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发表时间：
2001
影响因子：
8.6
通讯作者：
Y. Hirayama
中科院分区：
文献类型：
--
作者：
K. Kanisawa;M. Butcher;Y. Tokura;H. Yamaguchi;Y. Hirayama
用低温扫描隧道显微镜研究了InAs/GaAs（111）A表面四面体InAs结构的局域态密度（LDOS）。最低的四个零维（0 D）离散能级的LDOS已被成像在具有与电子波长相当的尺寸的结构中。观察到结构内部的LDOS在水平分离的间隔处高于周围区域。该特征指示接近0 D谐振能级的LDOS的奇异性。
The local density of states (LDOS) within tetrahedral InAs structures, formed at the surface of InAs/GaAs(111)A, has been characterized using low-temperature scanning tunneling microscopy. The LDOS of the lowest four zero-dimensional (0D) discrete levels have been imaged in structures with a comparable size to the electron wavelength. The LDOS inside the structures is observed to be higher than that of the surrounding area at intervals of the level separation. This feature indicates the singularity of the LDOS close to the 0D resonant levels.