Fabrication and field emission study of atomically sharp high-density tungsten nanotip arrays
Fabrication and field emission study of atomically sharp high-density tungsten nanotip arrays
复制标题
DOI：
10.1063/1.3437079
复制
发表时间：
2010-08
影响因子：
3.2
通讯作者：
Ke Sun;Jae Young Lee;Biyun Li;Wei Liu;Congqin Miao;Yahong Xie;Xinyu Wei;T. Russell
中科院分区：
文献类型：
--
作者：
Ke Sun;Jae Young Lee;Biyun Li;Wei Liu;Congqin Miao;Yahong Xie;Xinyu Wei;T. Russell
通过使用图案化的二氧化硅模板通过纳米铸造来制备原子锐利的高密度钨纳米针尖阵列。制造主要涉及自上而下的工艺，使其与当今的硅技术完全兼容。所获得的钨纳米针尖阵列具有原子尖端(曲率半径小于1 nm)、高发射极密度(∼5×1010 cm−2)、完美的针尖取向和优异的场发射性能，其开启电场为2.1V/μm，场增强因子为3334。独特的制造工艺流程使得W纳米尖端高度高度均匀，允许亚微米级的阴阳极间距，这大大放宽了对真空度的要求，使其能够进行低真空操作。
Atomically sharp high-density tungsten nanotip arrays are fabricated by nanocasting using a patterned SiO2 template. The fabrication involves mainly top-down processes making it fully compatible with today’s Si technology. The obtained tungsten nanotip arrays show atomically sharp tips (radius of curvature smaller than 1 nm), high emitter density (∼5×1010 cm−2), perfect tip alignment, and excellent field emission properties with a turn-on field of 2.1 V/μm and a field enhancement factor of 3334. The unique fabrication process flow leads to the highly uniform height of the W nanotips, allowing for submicron cathode-anode spacing, which very much relaxes the requirement of vacuum level and makes it possible for low vacuum operation.