Significant Enhancement of Infrared Photodetector Sensitivity Using a Semiconducting Single-Walled Carbon Nanotube/C60 Phototransistor
Significant Enhancement of Infrared Photodetector Sensitivity Using a Semiconducting Single-Walled Carbon Nanotube/C60 Phototransistor
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DOI：
10.1002/adma.201404544
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发表时间：
2015-01-27
影响因子：
29.4
通讯作者：
Bao, Zhenan
中科院分区：
文献类型：
--
作者：
Park, Steve;Kim, Soo Jin;Bao, Zhenan
制备了一种高灵敏度的单壁碳纳米管/ c60红外光电晶体管，在源/漏偏置为0.5 V时，其响应率为97.5 AW(-1)，探测率为1.17× 10 (9) Jones。这种独特的器件结构大大提高了性能，实现了≈10(4)的高光导增益，响应时间为几毫秒。
A highly sensitive single-walled carbon nanotube/C60-based infrared photo-transistor is fabricated with a responsivity of 97.5 AW (-1) and detectivity of 1.17× 10 (9) Jones at 1 kHz under a source/drain bias of-0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of≈ 10 (4) with a response time of several milliseconds.