Tensile strength of 〈1 0 0〉 and 〈1 1 0〉 tilt bicrystal copper interfaces
Tensile strength of 〈1 0 0〉 and 〈1 1 0〉 tilt bicrystal copper interfaces
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DOI：
10.1016/j.actamat.2006.08.060
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发表时间：
2007
期刊：
影响因子：
9.4
通讯作者：
D. Spearot;M. Tschopp;K. Jacob;D. McDowell
中科院分区：
文献类型：
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作者：
D. Spearot;M. Tschopp;K. Jacob;D. McDowell
用分子动力学(MD)模拟方法模拟了具有〈10 0〉或〈110〉错取向轴的对称倾斜双晶铜界面的位错成核.MD模拟表明，相对晶格区的取向和某些结构单元的存在是界面结构的两个关键属性，它们影响位错成核所需的应力。含有E结构单元的边界在相对较低的拉应力值下发射位错。提出了一个简单的模型来说明界面孔隙率和非滑动方向上作用于滑移面的应力对界面拉伸强度的影响。通过平均测量考虑界面孔隙率，发现足以模拟具有〈100〉错误取向轴的边界和具有〈110〉错误取向轴的许多边界的拉伸强度。
Molecular dynamics (MD) simulations are used to model dislocation nucleation at or near symmetric tilt bicrystal copper interfaces with 〈100〉 or 〈110〉 misorientation axes. MD simulations indicate that orientation of the opposing lattice regions and the presence of certain structural units are two critical attributes of the interface structure that affect the stress required for dislocation nucleation. Boundaries that contain the E structural unit are found to emit dislocations at comparatively low tensile stress magnitudes. A simple model is proposed to illustrate the impact of interfacial porosity and stresses acting on the slip-plane in non-glide directions on tensile interface strength. Accounting for interfacial porosity through an average measure is found to be sufficient to model the tensile strength of boundaries with a 〈100〉 misorientation axis and many boundaries with a 〈110〉 misorientation axis.