Equations of state for silicon inversion layers
Equations of state for silicon inversion layers
复制标题
硅反转层的状态方程
DOI：
10.1109/16.848290
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发表时间：
2000
影响因子：
3.1
通讯作者：
M. Ancona
中科院分区：
文献类型：
--
作者：
M. Ancona
通过将其结果与相应的Schrodinger-Poisson计算进行比较，详细研究了用于模拟[100] Si上量子化反型层的广义扩散漂移描述（称为密度梯度理论）的准确性。密度梯度理论的一个关键要素是用来模拟电子气响应的状态方程。各种这样的方程被认为是包括新的方法来模拟提升的导带谷简并和代表交换相关效应。总的来说，该理论在很宽的偏置、氧化层厚度和掺杂浓度范围内表现得非常好。对于浅威尔斯和模拟内部深处的密度，半导体密度梯度理论实际上优于量子力学方法，除非后者包括大量的子带。当与实验比较时，由于氧化物和栅极处理的不确定性，这两种理论在预测意义上都没有那么好。
The accuracy of a generalized diffusion-drift description known as density-gradient theory for modeling the quantized inversion layer on [100] Si is studied in detail by comparing its results with corresponding Schrodinger-Poisson calculations. A key element of density-gradient theory is the equation of state used to model the response of the electron gas. A variety of such equations are considered including new approaches for modeling the lifting of the conduction band valley degeneracy and for representing exchange-correlation effects. On the whole, the theory does remarkably well over a wide range of biases, oxide thicknesses, and doping concentrations. For shallow wells and for simulating the density deep inside the semiconductor density-gradient theory actually outperforms the quantum mechanical approach unless the latter includes large numbers of subbands. When comparing with experiment, neither theory works that well in a predictive sense because of uncertainties in the treatment of the oxide and of the gate.