Thermal annealing effect on material characterizations of β-Ga2O3 epilayer grown by metal organic chemical vapor deposition
Thermal annealing effect on material characterizations of β-Ga2O3 epilayer grown by metal organic chemical vapor deposition
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DOI：
10.1063/1.4773247
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发表时间：
2013-01-07
影响因子：
4
通讯作者：
Kao, Hsiang-Shun
中科院分区：
文献类型：
--
作者：
Huang, Chiung-Yi;Horng, Ray-Hua;Kao, Hsiang-Shun
本工作采用低压金属有机化学气相沉积的方法，在(0001)蓝宝石上低温生长了单晶β-Ga2O外延层。优化的腔体压力、氧气流量和生长温度分别为15Torr、200sccm和500℃。所制备的β-Ga2O_3外延层是一种金属-半导体-金属太阳盲深紫外光探测器。由于氧化镓是在较低的温度下生长的，所以生长的β-Ga2O外延层在800℃的气氛或氮气环境中进行了热处理。用X射线衍射仪、差温阴极发光、霍尔测量等方法研究了氮气退火前后β-Ga2O_3外延层缺陷的影响。经N-2处理15min的β-Ga2O_3外延层表现出比未生长的β-Ga2O_3外延层更好的光电探测器性能。在5V偏压下，退火态外延层的暗电流为1.6×10(-13)A。(C)2013年美国物理研究所。[http://dx.doi.org/10.1063/1.4773247]
In this work, a single-crystalline beta-Ga2O3 epilayer was grown on (0001) sapphire at low temperature by low-pressure metal organic chemical vapor deposition. The optimized parameters for the chamber pressure, oxygen flow, and growth temperature were 15 Torr, 200 sccm, and 500 degrees C, respectively. The beta-Ga2O3 epilayer was fabricated as a metal-semiconductor-metal solar-blind deep ultraviolet photodetector. Due to the gallium oxide grown at low temperature, the as-grown beta-Ga2O3 epilayer was annealed at 800 degrees C in atmosphere or in a nitrogen environment. The effects of defects of the beta-Ga2O3 epilayer before and after N-2 annealing were studied using x-ray diffraction system, cathodoluminescence at differential temperature, and Hall measurement. The beta-Ga2O3 epilayer that was N-2 annealed for 15min presented better photodetector performance than the as-grown beta-Ga2O3 epilayer. The annealed epilayer exhibited a dark current of 1.6 x 10(-13) A under 5 V bias. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773247]