Piezoresistance of carbon nanotubes on deformable thin-film membranes
Piezoresistance of carbon nanotubes on deformable thin-film membranes
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DOI：
10.1063/1.1872221
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发表时间：
2005-02-28
影响因子：
4
通讯作者：
Dai, HJ
中科院分区：
文献类型：
--
作者：
Grow, RJ;Wang, Q;Dai, HJ
碳纳米管具有有趣的机电特性，可能会使一类新的纳米机械传感器。我们在氮化硅薄膜上制作了两端纳米管器件，测量了它们的电子输运与应变的关系，并估计了它们的带隙和应变引起的变化。我们发现带隙增加和减少之间的半导体和小间隙半导体（SGS）管。SGS的带隙超过了预测的曲率引起的差距，他们的直径。这两种类型的管的带隙变化的一些超过了预测的最大值。这些异常可能是由于与粗糙氮化硅表面的相互作用引起的。(C)2005年美国物理学会。
Carbon nanotubes have interesting electromechanical properties that may enable a new class of nanoscale mechanical sensors. We fabricated two-terminal nanotube devices on silicon nitride membranes, measured their electronic transport versus strain, and estimated their band gaps and the strain-induced changes in them. We found band-gap increases and decreases among both semiconducting and small-gap semiconducting (SGS) tubes. The SGS band gaps exceeded the predicted curvature-induced gaps for their diameter. Some of the band-gap changes for both types of tubes exceeded the predicted maxima. These anomalies are likely caused by interaction with the rough silicon nitride surface. (C) 2005 American Institute of Physics.