Effect of annealing on the interfacial Dzyaloshinskii-Moriya interaction in Ta/CoFeB/MgO trilayers
Effect of annealing on the interfacial Dzyaloshinskii-Moriya interaction in Ta/CoFeB/MgO trilayers
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DOI：
10.1063/1.4963731
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发表时间：
2016-07
期刊：
影响因子：
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通讯作者：
R. A. Khan;P. Shepley;A. Hrabec;A. Wells;Berthold Ocker;C. Marrows;Thomas A. Moore
中科院分区：
文献类型：
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作者：
R. A. Khan;P. Shepley;A. Hrabec;A. Wells;Berthold Ocker;C. Marrows;Thomas A. Moore
界面的Dzyaloshinskiii-Moriya相互作用（Dzyaloshinskii-Moriya interaction）已经被证明可以稳定具有垂直磁各向异性的薄膜中的纯手性尼尔型畴壁，并因此允许它们通过自旋霍尔扭矩传播。在这项研究中，我们证明了Ta/Co$_{20}$Fe$_{60}$B$_{20}$/MgO中的退火可能会影响其介电常数。我们发现在230 ℃的退火温度下，在D=0.057\pm0.003$ mJ/m$^{2}$处有一个峰值。使用纯场驱动的蠕变区域扩展技术测量磁场。磁场和各向异性场随退火温度的变化趋势相似。我们推断，的行为的双折射和各向异性有关的界面晶体有序和B驱逐出CoFe B层的退火温度的增加。
The interfacial Dzyaloshinskii-Moriya interaction (DMI) has been shown to stabilize homochiral Neel-type domain walls in thin films with perpendicular magnetic anisotropy and as a result permit them to be propagated by a spin Hall torque. In this study, we demonstrate that in Ta/Co$_{20}$Fe$_{60}$B$_{20}$/MgO the DMI may be influenced by annealing. We find that the DMI peaks at $D=0.057\pm0.003$ mJ/m$^{2}$ at an annealing temperature of 230 $^{\circ}$C. DMI fields were measured using a purely field-driven creep regime domain expansion technique. The DMI field and the anisotropy field follow a similar trend as a function of annealing temperature. We infer that the behavior of the DMI and the anisotropy are related to interfacial crystal ordering and B expulsion out of the CoFeB layer as the annealing temperature is increased.