Negative Field-Effect Mobility on (100) Si Surfaces
Negative Field-Effect Mobility on (100) Si Surfaces
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DOI：
10.1103/physrevlett.16.797
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发表时间：
1966-05
影响因子：
8.6
通讯作者：
F. Fang;W. Howard
中科院分区：
文献类型：
--
作者：
F. Fang;W. Howard
领域由于绝缘体的真空能级或导带的能量要高得多，结果是形成了一个势阱（见图3），而势阱可能很窄，这取决于半导体的掺杂。这里的“% farrow”是指从界面到热能电子的经典转折点的距离与电子波长相比很小。多年来，人们一直认为这种情况应该用量子力学来处理。事实上，Eisenhour和Eisenhour已经计算了Ge中p沟道中存在重空穴电荷时轻空穴的能级。
field. Sincethe vacuum level or, in this case, the conduction band of the insulator is much higher in energy, the result is a potential well (see Fig. 3), which, depending on the semicon-ductor doping, may be quite narrow.'% farrow," here, means that the distance from the interface to the classical turning point for electrons of thermal energy would be small compared with an electron wavelength. It has been recog-nized for some years that this situation should be treated quantum-mechanically~; in fact, Handler and Eisenhour have calculated the en-ergy levels for the lightholes in a p channel in Ge in the presence of charge due to the heavy holes.