Synthesis of epitaxial Pt on (100)Si using TiN buffer layer by pulsed laser deposition
Synthesis of epitaxial Pt on (100)Si using TiN buffer layer by pulsed laser deposition
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脉冲激光沉积使用 TiN 缓冲层在 (100)Si 上外延 Pt 的合成
DOI：
10.1063/1.112608
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
J. Narayan
中科院分区：
文献类型：
--
作者：
P. Tiwari;Xindi Wu;S. Foltyn;Q. Jia;I. Campbell;P. Arendt;R. Muenchausen;D. Peterson;T. Mitchell;J. Narayan
采用脉冲激光沉积技术在（100）Si上制备了高质量的外延Pt薄膜，并将TiN作为缓冲层。薄膜垂直于衬底表面，相对于衬底和缓冲层的主轴具有高度的平面内取向。该薄膜的离子束最小导通率为39%，显示出较高的结晶度。高分辨率透射电镜结果表明，衬底/薄膜和薄膜/薄膜之间的界面非常光滑，没有观察到明显的相互扩散。外延TiN层有效地作为阻碍金属-衬底反应的屏障，并有助于Pt膜在（100）Si上的良好粘附。这种结构适合于在具有导电电极的硅上外延生长氧化膜。采用脉冲激光沉积技术在（100）Si上制备了高质量的外延Pt薄膜，并将TiN作为缓冲层。薄膜垂直于衬底表面，相对于衬底和缓冲层的主轴具有高度的平面内取向。该薄膜的离子束最小导通率为39%，显示出较高的结晶度。高分辨率透射电镜结果表明，衬底/薄膜和薄膜/薄膜之间的界面非常光滑，没有观察到明显的相互扩散。外延TiN层有效地作为阻碍金属-衬底反应的屏障，并有助于Pt膜在（100）Si上的良好粘附。这种结构适合于在具有导电电极的硅上外延生长氧化膜。
High‐quality epitaxial Pt films were deposited by pulsed laser deposition on (100)Si using TiN as a buffer layer. The films were (100) oriented normal to the substrate surface with a high degree of in‐plane orientation with respect to the major axes of the substrate and buffer layer. An ion beam minimum channeling yield of 39% was obtained for the Pt films, indicating high crystallinity. High‐resolution transmission electron microscopy results showed that interfaces between substrate/film and film/film were quite smooth and no perceptible interdiffusion was observed. The epitaxial TiN layer effectively acts as a barrier to impede metal‐substrate reaction and helps in good adhesion of the Pt films on (100)Si. This structure is suitable for epitaxial growth of oxide films on Si with an underlying conductive electrode.High‐quality epitaxial Pt films were deposited by pulsed laser deposition on (100)Si using TiN as a buffer layer. The films were (100) oriented normal to the substrate surface with a high degree of in‐plane orientation with respect to the major axes of the substrate and buffer layer. An ion beam minimum channeling yield of 39% was obtained for the Pt films, indicating high crystallinity. High‐resolution transmission electron microscopy results showed that interfaces between substrate/film and film/film were quite smooth and no perceptible interdiffusion was observed. The epitaxial TiN layer effectively acts as a barrier to impede metal‐substrate reaction and helps in good adhesion of the Pt films on (100)Si. This structure is suitable for epitaxial growth of oxide films on Si with an underlying conductive electrode.